Edge-state competition in a 2D topological insulator-semiconductor heterostructure
Published in Advanced Quantum Technologies, 2026
Abstract: Quantum spin Hall edge transport in two-dimensional transition-metal dichalcogenides depends on whether their one-dimensional edge channels are preserved under realistic substrates and device boundaries…
Citation: Wei Li, Pier Philipsen, Thomas Brumme, Thomas Heine. (2026). "Edge-State Competition in a 2D Topological Insulator-Semiconductor Heterostructure." Advanced Quantum Technologies. 9(4), e01001. https://doi.org/10.1002/qute.202501001.
[HTML]
